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Volumn 50, Issue 1-3, 1997, Pages 20-24

GaN thin films deposited by pulsed laser ablation in nitrogen and ammonia reactive atmospheres

Author keywords

Gallium nitride; Photoluminescence; Pulsed laser deposition; Thin films

Indexed keywords

AMMONIA; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; LASER ABLATION; LASER PULSES; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

EID: 0003139863     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00202-X     Document Type: Article
Times cited : (14)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.