The mechanism of iron gettering in boron-doped silicon

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 51-53

  Stolk, P A ^a   Benton, J L ^a   Eaglesham, D J ^a   Jacobson, D C ^a   Cheng, J H ^a   Poate, J M ^a   Myers, S M ^b   Haynes, T E ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003184712     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116754     Document Type: Article

References (14)

1. E. R. Weber, Appl. Phys. A 30, 1 (1983).
2. W. B. Henley, L. Jastrzebski, and N. F. Haddad, in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber, MRS Symposia Proceedings Vol. 262 (Materials Research Society, Pittsburgh, PA, 1992), p. 993.
3. D. Gilles, E. R. Weber, and S. Hahn, Phys. Rev. Lett. 64, 196 (1990); D. Gilles, Ref. 2, p. 917.
4. B. Shen, T. Sekiguchi, J. Jablonski, and K. Sumino, J. Appl. Phys. 76, 4540 (1994).
5. M. Aoki, A. Hara, and A. Ohsawa, J. Appl. Phys. 72, 895 (1992).
6. S. Sano, S. Sumita, T. Shigematsu, and N. Fujino, in Semiconductor Silicon/1994, Proceedings of The Electrochemical Society, edited by H. R. Huff, W. Bergholz, and K. Sumino (The Electrochemical Society, Pennington, 1994), p. 784.
7. M. Aoki, A. Itakura, and N. Sasaki, Appl. Phys. Lett. 66, 2709 (1995).
8. D. Gilles, W. Schröter, and W. Bergholz, Phys. Rev. B 41, 5770 (1990).
9. H. Lemke, Phys. Status Solidi 64, 215 (1981).
10. L. C. Kimerling and J. L. Benton, Physica B 116, 297 (1983).
11. S. Isomae, T. Ishiba, T. Ando, and T. Tamura, J. Appl. Phys. 74, 3815 (1993).
12. f=141°C, τ=67 s, and β=0.71.
13. This approach assumes that the Debye length is smaller than the characteristic width of the implanted B profile, which is reasonable for the presently studied doping levels.
14. S. V. Koveshnikov and G. A. Rozgonyi, Appl. Phys. Lett. 66, 860 (1995).