Development and demonstration of a two-dimensional, accurate and computationally-efficient model for boron implantation into single-crystal silicon through overlying oxide layers

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 27-32

  Morris, S ^a   Lim, D ^a   Yang, S H ^a   Tian, S ^a   Parab, K ^a   Tasch, A F ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BORON; COMPUTER SIMULATION; COMPUTER SOFTWARE; ION IMPLANTATION; MATHEMATICAL MODELS; OXIDES; SINGLE CRYSTALS; SPATIAL VARIABLES MEASUREMENT;

MASK EDGE ORIENTATION; MASK HEIGHT; OVERLYING OXIDE LAYERS; OXIDE LAYER THICKNESS; ROTATION ANGLES; TILT ANGLES; TWO DIMENSIONAL MODEL;

SEMICONDUCTING SILICON;

EID: 0029708525     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)