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Volumn 396, Issue , 1996, Pages 733-738
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Diffusion, precipitation, and cavity-wall reactions of ion-implanted gold in silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
BINDING ENERGY;
BONDING;
CHEMICAL REACTIONS;
CHEMISORPTION;
CRYSTAL IMPURITIES;
DIFFUSION;
GOLD;
ION IMPLANTATION;
PRECIPITATION (CHEMICAL);
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SOLUBILITY;
CAVITY WALL REACTIONS;
EXTRAPOLATION;
GETTERING CENTERS;
SEMICONDUCTING SILICON;
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EID: 0029723950
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (6)
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References (9)
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