Physical characterization of two-dimensional doping profiles for process modeling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 231-235

  Alvis, Roger ^a   Luning, Scott ^a   Thompson, Liliana ^a   Sinclair, Robert ^b   Griffin, Peter ^b  

^a ADVANCED MICRO DEVICES   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003566523     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588453     Document Type: Article

References (7)

1. Athena, 2D Process Simulation Framework, 2nd ed. (Silvaco International, Santa Clara, CA, 1994).
2. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1994), p. 49.
3. D. Maher and B. Zhang, Proceedings of the Second International Workshop on the Measurement and Characterization of Ultra Shallow Doping Profiles in Semiconductors (AIP, New York, 1993), pp. 263-267.
4. J. Liu, M. L. Dass, and R. Gronsky, Ref. 3, pp. 271-277.
5. R. Alvis and B. Mantiply, Proceedings of the Third International Workshop on the Measurement and Characterization of Ultra Shallow Doping Profiles in Semiconductors (AIP, New York, 1995), pp. 50.1-50.9.
6. See, for example, Session 35 of the Technical Digest of International Electron Devices Meeting, 1994.
7. R. Alvis and B. Mantiply, Ref. 5.