Growth of AlxGa1-xN-layers on planar and patterned substrates

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 506-514

  Rossow, U ^a   Fuhrmann, D ^a   Greve, M ^a   Blasing J ^b   Krost, A ^b   Ecke, G ^c   Riedel, N ^a   Hangleiter, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

A1. Atomic force microscopy; A1. High resolution X ray diffraction; A1. Surfaces; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B2. Semiconducting ternary compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; MASS TRANSPORTATION; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; SILICON CARBIDE; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X-RAY DIFFRACTION; SEMICONDUCTING III-V MATERIALS; SEMICONDUCTING TERNARY COMPOUNDS; TRIMETHYLALUMINIUM (TMAL);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 9944264942     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.044     Document Type: Conference Paper

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