Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3093-3095

  Riemann, T ^a   Christen, J ^a   Kaschner, A ^b   Laades, A ^b   Hoffmann, A ^b   Thomsen, C ^b   Iwaya, M ^c   Kamiyama, S ^c   Amano, H ^c   Akasaki, I ^c  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALUMINUM CONTENTS; CATHODOLUMINESCENCE MICROSCOPY; CRACK FREE; EMISSION WAVELENGTH; GAN/SAPPHIRE; MATERIAL QUALITY; MICRO-DOMAINS; PATTERN PERIODICITY; SAMPLE SURFACE; SELF-ORGANIZED FORMATION; SPATIALLY RESOLVED; STOCHIOMETRY;

CRACKS; GALLIUM; THREE DIMENSIONAL;

GALLIUM ALLOYS;

EID: 79956008220     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473703     Document Type: Article

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