Growth of AlxGa1-xN and GaN on photo- electrochemically patterned SiC substrates

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2072-2076

  Ahrend, U ^a   Rossow, U ^a   Riedel, N ^a   Greve, M ^a   Hitzel, F ^a   Hangleiter, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT REDUCTION; GROWTH PROCESS; LATERAL GROWTH RATES; LAYERED STRUCTURES; MESA STRUCTURE; PATTERNED SUBSTRATES; PLANAR SUBSTRATE; SIC SUBSTRATES;

DEFECTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; SILICON CARBIDE;

DEFECT DENSITY;

EID: 84875104603     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303407     Document Type: Conference Paper

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