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Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 21-26

Lateral growth of AlxGa1-xN and GaN on SiC substrates patterned by photo-electrochemical etching

(5) Rossow, U a Riedel, N a Hitzel, F a Riedl, T a Hangleiter, A a

a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DENSITY (SPECIFIC GRAVITY); ELECTROCHEMISTRY; ETCHING; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; REDUCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

ALUMINUM GALLIUM NITRIDE; DEFECT DENSITIES; LATERAL GROWTH; PHOTOELECTROCHEMICAL ETCHING;

EPITAXIAL GROWTH;

EID: 0038711267 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-743-l1.9 Document Type: Conference Paper

Times cited : (2)

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