Strain-induced effect on the Al incorporation in AlGaN films and the properties of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 28-36

  Gong, Jyh Rong ^a   Liao, Wei Tsai ^a   Hsieh, Shyang Lin ^a   Lin, Po Hung ^a   Tsai, Yu Li ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

A1.Characterization; B1.Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ABSORPTION; AMMONIA; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN;

EMISSION ENERGIES;

SEMICONDUCTOR GROWTH;

EID: 0037298440     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02092-4     Document Type: Article

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