Gallium nitride nanowires doped with silicon

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4241-4243

  Liu, Ji ^a   Meng, Xiang Min ^a   Jiang, Yang ^a   Lee, Chun Sing ^a   Bello, Igor ^a   Lee, Shuit Tong ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HOT FILAMENT CHEMICAL VAPOR DEPOSITION; NANOWIRES; QUANTUM CONFINEMENT EFFECT;

GALLIUM NITRIDE;

EID: 0346780492     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628820     Document Type: Article

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