Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 144-147

  Macfarlane, P J ^a   Zvanut, M E ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; OXIDATION; PASSIVATION; SILICON CARBIDE;

HYDROGEN EFFUSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032687425     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0004-3     Document Type: Article

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