메뉴 건너뛰기




Volumn 30, Issue 9, 1999, Pages 833-836

Application of α-C:H films to masking etching of silicon dioxide

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARBON; CHEMICAL VAPOR DEPOSITION; ETCHING; FLUORINE COMPOUNDS; HYDROGENATION; MASKS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILMS;

EID: 0032655405     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00018-X     Document Type: Article
Times cited : (5)

References (11)
  • 2
  • 5
    • 0016540151 scopus 로고
    • A new C-MOS technology using anisotropic etching of silicon
    • Declercq M.J. A new C-MOS technology using anisotropic etching of silicon. IEEE J. Solid St. Circuits. SC-10:(4):1975;191-197.
    • (1975) IEEE J. Solid St. Circuits , vol.10 , Issue.4 , pp. 191-197
    • Declercq, M.J.1
  • 8
    • 0002219179 scopus 로고
    • Deposition of hard and isolating carbonaceous films on a rf. target in na butane plasma
    • Holland L., Ojha S.M. Deposition of hard and isolating carbonaceous films on a rf. target in na butane plasma. Thin Solid Films. 38:1976;L17-L19.
    • (1976) Thin Solid Films , vol.38
    • Holland, L.1    Ojha, S.M.2
  • 9
    • 0020799564 scopus 로고
    • R.f.-plasma deposited amorphous hydrogenated hard carbon thin films: Preparation properties and applications
    • Bubenzer A., Dischler B., Brandt G., Koidl P. r.f.-plasma deposited amorphous hydrogenated hard carbon thin films: preparation properties and applications. J. Appl. Phys. 54:1983;4590-4595.
    • (1983) J. Appl. Phys. , vol.54 , pp. 4590-4595
    • Bubenzer, A.1    Dischler, B.2    Brandt, G.3    Koidl, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.