Behaviors of carrier concentrations and mobilities in indium-tin oxide thin films by DC magnetron sputtering at various oxygen flow rates

Vacuum

Volumn 77, Issue 1, 2004, Pages 69-77

  Lee, Ho Chul ^a   Park, O Ok ^b  

^a Samsung Corning Co Ltd   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Concentration; Hall measurement; Indium tin oxide; Mobility; Oxygen

Indexed keywords

CARRIER MOBILITY; DEFECTS; HALL EFFECT; INDIUM COMPOUNDS; IONIZATION; MAGNETRON SPUTTERING; OXYGEN; THIN FILMS;

HALL MEASUREMENT; INDIUM-TIN OXIDE; OPTIMUM OXYGEN REGION; OXYGEN FLOW RATE;

CARRIER CONCENTRATION;

EID: 9644265322     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.08.006     Document Type: Article

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