SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 392, Issue 1, 2001, Pages 91-97

Structural and electrical properties of In2O3:Sn films prepared by radio-frequency sputtering

(4) Mergel, D a Schenkel, M a Ghebre, M a Sulkowski, M a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

Electrical properties and measurements; Indium tin oxide; Sputtering; X Ray diffraction

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; FILM GROWTH; FILM PREPARATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPUTTER DEPOSITION; TIN; X RAY DIFFRACTION ANALYSIS;

FREE ELECTRON CONCENTRATION; RADIO-FREQUENCY SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0035939504 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01013-6 Document Type: Article

Times cited : (65)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.