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Volumn 411, Issue 1, 2002, Pages 17-22
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A study of the effect of process oxygen on stress evolution in d.c. magnetron-deposited tin-doped indium oxide
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Author keywords
Amorphous; Crystallization; Evolution; Indium tin oxide; ITO; Kinetics; Low temperature processing; Stress; Transparent conducting oxides; Vacancy; Volume
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Indexed keywords
CRYSTALLIZATION;
CURRENT DENSITY;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY OF SOLIDS;
FILM GROWTH;
INDIUM COMPOUNDS;
MAGNETRON SPUTTERING;
PARTIAL PRESSURE;
REACTION KINETICS;
SPUTTER DEPOSITION;
STOICHIOMETRY;
STRESS ANALYSIS;
THICK FILMS;
TIN;
HALL MOBILITY;
THIN FILMS;
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EID: 0037157434
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(02)00166-9 Document Type: Article |
Times cited : (61)
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References (12)
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