Improving SiO2 grown on P-type 4H-SiC by NO annealing

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 869-872

  Li, H F ^a   Dimitrijev, S ^a   Harrison, H B ^a   Sweatman, D ^a   Tanner, P T ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

C V Characteristic; Interface Traps; Nitridation; Oxide; Oxide Charge

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); NITRIDING; NITROGEN OXIDES; SEMICONDUCTOR DOPING; SILICA; SILICON CARBIDE;

DEPLETION REGION; RCA CLEANING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031701323     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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