Turning off hydrogen to realize seeded growth of subcentimeter single-crystal graphene grains on copper

ACS Nano

Volumn 7, Issue 10, 2013, Pages 9480-9488

  Gan, Lin ^a   Luo, Zhengtang ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

chemical vapor deposition; grain boundary; graphene; seeded growth; single crystal graphene

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; COPPER NANOPARTICLES; DEGREE OF OXIDATIONS; ELECTRONIC CONNECTIVITY; NANOPARTICLE DENSITY; NUCLEATION DENSITIES; SEEDED GROWTH; SURFACE IRREGULARITIES;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; COPPER; GRAIN BOUNDARIES; MORPHOLOGY; NANOPARTICLES; NUCLEATION; VAPORS;

GRAPHENE;

EID: 84887014588     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn404393b     Document Type: Article

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