Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride

Journal of Physics Condensed Matter

Volumn 25, Issue 50, 2013, Pages

  Chattrakun, Kanokporn ^a   Huang, Shengqiang ^a   Watanabe, K ^b   Taniguchi, T ^b   Sandhu, A ^a,c   Leroy, B J ^a  

^a The University of Arizona   (United States)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY FLAT SURFACE; CHARGED IMPURITY; CHEMICAL VAPOR DEPOSITIONS (CVD); GRAPHENE DEVICES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); NON-DESTRUCTIVE IMAGING; TWO DIMENSIONAL MAPPING;

BORON NITRIDE; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICA; SUBSTRATES;

GRAPHENE;

BORON DERIVATIVE; BORON NITRIDE; GRAPHITE; NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; MATERIALS TESTING; RAMAN SPECTROMETRY; SURFACE PROPERTY;

BORON COMPOUNDS; CRYSTALLIZATION; GRAPHITE; MATERIALS TESTING; NANOSTRUCTURES; SILICON DIOXIDE; SPECTRUM ANALYSIS, RAMAN; SURFACE PROPERTIES;

EID: 84889007639     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/50/505304     Document Type: Article

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