Multiprobe Characterization of Inversion Charge for Self-Consistent Parameterization of HIT Cells

IEEE Journal of Photovoltaics

Volumn 5, Issue 3, 2015, Pages 725-735

  Chavali, Raghu Vamsi Krishna ^a   Khatavkar, Sanchit ^b   Kannan, C V ^c   Kumar, Vijay ^c   Nair, Pradeep R ^b   Gray, Jeffery Lynn ^a   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c Moser Baer India Limited   (India)

Author keywords

Amorphous semiconductors; capacitance voltage (C V) characteristics; current voltage (I V) characteristics; heterojunctions; process control; silicon

Indexed keywords

AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; CAPACITANCE; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; PARAMETER EXTRACTION; PROCESS CONTROL; SILICON; SOLAR CELLS;

A-SI/C-SI HETEROJUNCTIONS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHARACTERIZATION MEASUREMENT; DARK I-V CHARACTERISTICS; IMPEDANCE SPECTROSCOPY; MEASUREMENT TECHNIQUES; TEMPERATURE RESPONSE; VALENCE BAND DISCONTINUITY;

PARAMETER ESTIMATION;

EID: 85027941893     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2388072     Document Type: Article

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