Experimental and simulated analysis of front versus allback-contact silicon heterojunction solar cells: Effect of interface and doped a-Si:H layer defects

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 1, 2015, Pages 78-93

  Shu, Zhan ^a,b   Das, Ujjwal ^a   Allen, John ^a   Birkmire, Robert ^a,b   Hegedus, Steven ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

2D device simulation; Amorphous silicon defect; Interdigitated back contact; Interface defect state; Silicon heterojunction solar cell; Surface recombination

Indexed keywords

EID: 84919666149     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2400     Document Type: Article

References (38)

1. Tanaka M, Taguchi M, Matsuyama T, Sawada T, Tsuda S, Nakano S, Hanafusa H, and Kuwano Y, Development of new a-Si/c-Si heterojunction solar cells: artificially constructed junction-heterojunction with intrinsic thin-layer, Japanese Journal of Applied Physics 1992; 31: 3518-3522. DOI: 10.1143/JJAP.31.3518
2. De Wolf S, Descoeudres A, Holman Z, and Ballif C, High-efficiency silicon heterojunction solar cells: a review, Green 2012; 2: 7-24. DOI: 10.1515/green-2011-0039
3. th European Photovoltaic Solar Energy Conference 2011; 871-874. Hamburg, Germany. DOI: 10.4229/26thEUPVSEC2011-2AO.2.6
4. Lu M, Bowden S, Das U, and Birkmire R, Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation, Applied Physics Letters 2007; 91: 063507. DOI: 10.1063/1.2768635
5. th IEEE Photovoltaic Specialist Conference 2010; 003223-003228, Honolulu HI, USA.
6. Kanevce A and Metzger W, The role of amorphous silicon and tunneling in HIT solar cells, Journal of Applied Physics 2009; 105, 094507. DOI: 10.1063/1.3106642
7. Froitzheim A, Brendel K, Elstner L, FuhsW, Kliefoth K, and Schmidt M, Interface recombinations in heterojunctions of amorphous and crystalline silicon, Journal of Non-Crystalline Solids 2002; 299: 663-667. DOI: 10.1016/S0022-3093(01)01029-8.
8. Lu M, Das U, Bowden S, Hegedus S, and Birkmire R, Optimization of interdigitated back contact silicon heterojunction solar cells: tailoring hetero-interface band structures while maintaining surface passivation, Progress in Photovoltaics: Research and Applications 2011; 19: 326-338. DOI: 10.1002/pip.1032
9. Diouf D, Kleider JP, Desrues T, and Ribeyron PJ, Study of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulations, Materials Science and Engineering B. 2009; 159: 291-294. DOI: 10.1016/j.mseb.2008.09.002.
10. van Sark W, Korte L, and Roca F, Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, Chapter 15, Springer-Verlag: Berlin, 2012. DOI: 10.1007/978-3-642-22275-7
11. Demaurex B, De Wolf S, Descoeudres A, Holman ZC, Ballif C, Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering, Applied Physics Letters 2012; 101: 171604. DOI: 10.1063/1.4764529.
12. th European Photovoltaic Solar Energy Conference 2009; 2202-2205, Hamburg, Germany. DOI: 10.4229/24thEUPVSEC2009-2DV.1.63
13. Kerr M and Cuevas A, General parameterization of Auger recombination in crystalline silicon, Journal of Applied Physics 2002; 91: 2473-2480. DOI: 10.1063/1.1432476
14. Pankove J and Tarng M, Amorphous silicon as passivant for crystalline silicon, Applied Physics Letters 1979; 34: 156-157. DOI: 10.1063/1.90711
15. Olibet S, Vallat-Sauvain E, and Ballif C, Model of a-Si/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds, Physical Review B. 2007; 76: 035326. DOI: 10.1103/PhysRevB.76.035326
16. Li T, McIntosh K, and Cuevas A, Limitations of a simplified dangling bond recombination model for a-Si:H, Journal of Applied Physics 2008; 104: 113718. DOI: 10.1063/1.3037235
17. Garin M, Rau U, Brendle W, Martin I, and Alcubilla R, Characterization of a-Si/c-Si interfaces by effective-lifetime measurements, Journal of Applied Physics 2005; 98: 093711. DOI: 10.1063/1.2128047
18. Elmiger J, Schieck R, and Kunst M, Recombination at silicon nitride/silicon interface, Journal of Vacuum Science and Technology A 1997; 15: 2418-2425. DOI: 10.1116/1.580757
19. 2 interface, Journal of Applied Physics 1992; 71: 4422-4431. DOI: 10.1063/1.350782
20. Favre M, Curtins H, and Shah AV, Study of surface/interface and bulk defect density in a-Si by means of photothermal deflection spectroscopy and photoconductivity, Journal of Non-Crystalline Solids 1987; 97/98: 731-734. DOI: 10.1016/0022-3093(87)90172-4
21. Leendertz C, Stangl R, Schulze T, Schmidt M and Korte L, A recombination model for a-Si/c-Si hetero-structures, Physical Status Solidi C. 2010; 7: 1005-1010. DOI: 10.1002/pssc.200982698
22. Korte L and Schmidt M, Doping type and thickness dependence of band offsets at the amorphous/crystalline silicon heterojunction, Journal of Applied Physics 2011; 109: 063714. DOI: 10.1063/1.3559296
23. Street R, Localized states in doped amorphous silicon, Journal of Non-Crystalline Solids 1985; 77: 1-16. DOI: 10.1016/0022-3093(85)90599-X.
24. Stutzmann M, The defect density in amorphous silicon, Philosophy Magazine B. 1989; 60(4): 531. DOI: 10.1080/13642818908205926
25. Schropp R and Zeman M: Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology, Kluwer Academic: Dordrecht, 1998; 183.
26. Cody G, Tiedje T, Abeles B, Brooks B, and Goldstein Y, Disorder and the optical-absorption edge of hydrogenated amorphous silicon, Physical Review Letters 1981; 47: 1480-1483. DOI: 10.1103/PhysRevLett.47.1480
27. 2 interface recombination parameters using a gate-controlled point-junction diode under illumination, IEEE Transactions on Electron Device 1988; 35(2): 203-222. DOI: 10.1109/16.2441
28. th IEEE World Conf on Photovoltaic Energy Conversion 2006; 1433-1438, San Diego CA, USA. DOI: 10.1109/wcpec.2006.279722
29. Schmidt J, Schuurmans F, Sinke W, Glunz S, and Aberle A, Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition, Applied Physics Letters 1997; 71: 252-254. DOI: 10.1063/1.119512
30. th IEEE Photovoltaic Specialist Conference 2009; 001316-001320, Philadelphia, PA USA. DOI: 10.1109/pvsc.2009.5411256
31. Rahmouni M, Datta A, Chatterjee P, Damon-Lacoste J, Ballif C, and Cabarrocas P, Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on n-type crystalline silicon: a computer simulation study, Journal of Applied Physics 2010; 107: 054521. DOI: 10.1063/1.3326945
32. th IEEE Photovoltaic Specialist Conference 2011; 002545-002549, Seattle WA, USA. DOI: 10.1109/pvsc.2011.6186467
33. Schulze T, Korte L, Ruske F, and Rech B, Band lineup in amorphous/crystalline silicon heterojunctions and the impact of hydrogen microstructure and topological disorder, Physical Review B. 2011; 83: 165314. DOI: 10.1103/PhysRevB.83.165314
34. Granek F, Hermle M, Huljic D, and Glunz S, Enhance lateral current transport via the front N + diffused layer of n-type high efficiency back-junction back-contact silicon solar cell, Progress in Photovoltaics: Research and Applications 2009; 17: 47-56. DOI: 10.1002/pip.862
35. Reichel C, Granek F, Hermle M, and Glunz S, "investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem", Journal of Applied Physics 2011; 109: 024507. DOI: 10.1063/1.3524506
36. Wu CM and Yang ES, Carrier transport across heterojunction interfaces, Solid State Electronics 1979; 22: 241-248. DOI: 10.1016/0038-1101(79)90028-5.
37. Ji KS, Syn H, Choi J, Lee HM, and Kim D, The emitter having microcrystalline surface in silicon heterojunction interdigitated back contact solar cells, Japanese Journal of Applied Physics 2012; 51: 10NA05. DOI: 10.1143/JJAP.51.10NA05
38. Mingirulli N, Haschke J, Gogolin R, Ferre R, Schulze T, Dusterhoft J, Harder NP, Korte L, Brendel R, and Rech B, Efficient interdigitated back-contacted silicon heterojunction solar cells, Physica Status Solidi-Rapid Research Letters 2011; 5: 159-161. DOI: 10.1002/pssr.201105056