SCOPUS 정보 검색 플랫폼

Volumn 110, Issue 11, 2011, Pages

Capacitance study of inversion at the amorphous-crystalline interface of n-type silicon heterojunction solar cells

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; CRYSTALLINE SILICONS; FORWARD BIAS; HOLE DENSITIES; INTERFACE RECOMBINATION; N TYPE SILICON; STRONG INVERSION;

CAPACITANCE; CRYSTALLINE MATERIALS; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE;

FERMI LEVEL;

EID: 84859356952 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3663433 Document Type: Article

Times cited : (27)

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