On the nature of shunt leakage in amorphous silicon p-i-n solar cells

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1266-1268

  Dongaonkar, Sourabh ^a   Y, Karthik ^b   Wang, Dapeng ^c   Frei, Michel ^c   Mahapatra, Souvik ^b   Alam, Muhammad A ^a  

^a PURDUE UNIVERSITY   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c APPLIED MATERIALS INC   (United States)

Author keywords

amorphous silicon solar; dark current; shunt leakage; space charge limited (SCL) current

Indexed keywords

A-SI:H; DIODE CURRENTS; EMPIRICAL METHOD; EXPERIMENTAL OBSERVATION; POWER-LAW VOLTAGE; SHUNT CURRENT; SHUNT LEAKAGE; SPACE-CHARGE-LIMITED; SPACE-CHARGE-LIMITED CURRENT; TEMPERATURE DEPENDENCE;

LEAKAGE CURRENTS; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 77958591566     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2064754     Document Type: Article

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