Investigation of a-Si:H/c-Si heterojunction solar cells interface properties

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 345-349

  Gudovskikh, A S ^a   Kleider, J P ^a   Froitzheim, A ^b   Fuhs, W ^b   Terukov, E I ^c  

^a UNIV PARIS SUD   (France)

^b HAHN MEITNER INSTITUT   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Capacitance technique; Heterojunction; Solar cells

Indexed keywords

CAPACITANCE; CORRELATION METHODS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS;

CAPACITANCE TECHNIQUE; TUNNEL OXIDE FORMATION;

SILICON SOLAR CELLS;

EID: 1442286770     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.127     Document Type: Conference Paper

References (7)

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