An improvement of the capacitance-voltage method to determine the band offsets in a-Si:H/c-Si heterojunctions

IEEE Transactions on Electron Devices

Volumn 61, Issue 2, 2014, Pages 394-399

  Zhong, Chun Liang ^a   Yao, Ruo He ^b   Geng, Kui Wei ^b  

^a HUNAN UNIVERSITY OF TECHNOLOGY   (China)

^b SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Diffusion potential; Heterojunctions; Inversion layer; Solar cells

Indexed keywords

CAPACITANCE; ERRORS; INVERSION LAYERS; SILICON; SOLAR CELLS; SURFACE DIFFUSION;

CAPACITANCE-VOLTAGE METHOD; CONDUCTANCE MEASUREMENT; CONDUCTION BAND OFFSET; DIFFERENTIAL CAPACITANCE; DIFFUSION POTENTIAL; HETEROJUNCTION SOLAR CELLS; STRONG INVERSION; THEORETICAL VALUES;

HETEROJUNCTIONS;

EID: 84893453262     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2295459     Document Type: Article

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