On the plasma chemistry during plasma enhanced chemical vapor deposition of microcrystalline silicon oxides

Plasma Processes and Polymers

Volumn 12, Issue 1, 2015, Pages 82-91

  Gabriel, Onno ^a   Kirner, Simon ^a   Klingsporn, Max ^b   Friedrich, Felice ^c   Stannowski, Bernd ^a   Schlatmann, Rutger ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b IHP   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Microcrystalline films; Microcrystalline silicon oxides; Plasma chemistry; Plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRONIC PROPERTIES; MICROCRYSTALLINE SILICON; PLASMA DIAGNOSTICS; REFRACTIVE INDEX; SILICON OXIDES; SOLAR CELLS; VAPOR DEPOSITION;

DEPOSITION REGIMES; LOW REFRACTIVE INDEX; MICROCRYSTALLINE FILMS; OPTOELECTRONIC PROPERTIES; PLASMA CHEMISTRIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); PLASMA PROPERTIES; THIN FILM LAYERS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 85027928843     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.201400114     Document Type: Article

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