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Volumn 120, Issue PART A, 2014, Pages 143-150

Silicon oxide buffer layer at the p-i interface in amorphous and microcrystalline silicon solar cells

Author keywords

Amorphous silicon; Boron cross contamination; Microcrystalline silicon nucleation; p i interface; Silicon oxide; Solar cell

Indexed keywords

CARRIER COLLECTION; CROSS CONTAMINATION; ELECTRICAL PARAMETER; MATERIAL QUALITY; OXIDE BUFFER LAYERS; PROCESSING STEPS; THIN-FILM SILICON SOLAR CELLS; WIDE BAND-GAP MATERIAL;

EID: 84888370751     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.08.034     Document Type: Article
Times cited : (42)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.