The roles of deposition pressure and rf power in opto-electronic properties of a-SiO:H films

Journal of Physics D: Applied Physics

Volumn 31, Issue 14, 1998, Pages 1630-1641

  Iftiquar, S M ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; FILMS; OPTICAL PROPERTIES; OXIDES; PLASMAS; PRESSURE EFFECTS;

RADIO FREQUENCY PLASMA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032119106     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/14/004     Document Type: Article

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