Growth mechanism of microcrystalline silicon at high pressure conditions

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 56-60

  Rath, J K ^a   Franken, R H J ^a   Gordijn, A ^a   Schropp, R E I ^a   Goedheer, W J ^a,b  

^a UTRECHT UNIVERSITY   (Netherlands)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALS; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; THERMAL EFFECTS; THIN FILMS;

NANOMETER SCALES; OPTICAL EMISSION SPECTROSCOPY (OES); PLASMA DIAGNOSTICS TOOLS;

SILICON;

EID: 2942597946     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.021     Document Type: Conference Paper

References (4)

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2. Kondo M., Matsuda A. Curr. Opin. Solid State Mater. Sci. 6:2002;445.
3. Rath J.K. Solar Energy Mater. Solar Cell. 76:2003;431.
4. Nienhuis G.J., Goedheer W.J., Hamers E.A.G., van Sark W.G.J.H.M., Bezemer J. J. Appl. Phys. 82:1997;2060.