Plasma enhanced chemical vapor deposition process optimization for thin film silicon tandem junction solar cells

Thin Solid Films

Volumn 558, Issue , 2014, Pages 337-343

  Rohde, Martin ^a   Zelt, Matthias ^b   Gabriel, Onno ^b   Neubert, Sebastian ^b   Kirner, Simon ^b   Severin, Daniel ^a   Stolley, Tobias ^a   Rau, Björn ^b   Stannowski, Bernd ^b   Schlatmann, Rutger ^b  

^a Applied Materials GmbH and Co KG   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Amorphous silicon; Manufacturability; Microcrystalline silicon; Oxide doped; Plasma enhanced chemical vapor deposition; Tandem cells

Indexed keywords

MICROCRYSTALLINE SILICON; OPTICAL FILMS; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON OXIDES; SOLAR CELLS; THIN FILMS; VAPORS;

ALUMINUM-DOPED ZINC OXIDE; BASE-LINE PERFORMANCE; EXCITATION FREQUENCY; MANUFACTURABILITY; MODULE MANUFACTURING; P-DOPED MICROCRYSTALLINE SILICONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); TANDEM CELLS;

AMORPHOUS SILICON;

EID: 84898806518     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.03.008     Document Type: Article

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