Generic origin of subgap states in transparent amorphous semiconductor oxides illustrated for the cases of In-Zn-O and In-Sn-O

Physica Status Solidi (A) Applications and Materials Science

Volumn 212, Issue 7, 2015, Pages 1476-1481

  Körner, Wolfgang ^a   Urban, Daniel F ^a   Elsässer, Christian ^a  

^a FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

Author keywords

amorphous materials; band tails; deep levels; gap states; transparent conductive oxides

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SEMICONDUCTORS; CONDUCTIVE MATERIALS; DEFECTS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; OXYGEN; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS;

BAND TAIL; DEEP-LEVELS; ELECTRONIC DEFECTS; GAP STATE; MICROSCOPIC INTERPRETATION; OXYGEN DEFICIENCY; SELF-INTERACTION CORRECTIONS; TRANSPARENT CONDUCTIVE OXIDES;

TIN COMPOUNDS;

EID: 85027925099     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201431871     Document Type: Article

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