Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

Applied Physics Letters

Volumn 104, Issue 23, 2014, Pages

  Sallis, S ^a   Butler, K T ^b   Quackenbush, N F ^c   Williams, D S ^a   Junda, M ^d   Fischer, D A ^e   Woicik, J C ^e   Podraza, N J ^d   White Jr , B E ^a,c   Walsh, A ^b   Piper, L F J ^a,c  

^a State University of New York   (United States)

^b University of Bath   (United Kingdom)

^c BINGHAMTON UNIVERSITY   (United States)

^d UNIVERSITY OF TOLEDO   (United States)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); AMORPHOUS STRUCTURES; AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; ATOMISTIC CALCULATIONS; LOW TEMPERATURE ANNEALING; OXYGEN COORDINATION; POSITIVE CORRELATIONS; REDUCING ENVIRONMENT;

OXYGEN;

EID: 84902503999     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4883257     Document Type: Article

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