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Journal of Applied Physics

Volumn 114, Issue 16, 2013, Pages

Origin of subgap states in amorphous In-Ga-Zn-O

(3) Körner, Wolfgang a Urban, Daniel F a Elsässer, Christian a,b

a FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM (Germany)

b KARLSRUHE INSTITUTE OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DEFECTS; HYDROGEN DOPING; METAL DEFECTS; NON-STOICHIOMETRIC; SECOND CLASS; STRUCTURAL FEATURE; SUBGAP STATE; VALENCE BAND EDGES;

ATOMS; DEFECTS; ENERGY GAP; GALLIUM; HYDROGEN; OXYGEN; ZINC;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 84887284918 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4826895 Document Type: Article

Times cited : (94)

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