Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities

Energy Procedia

Volumn 92, Issue , 2016, Pages 412-418

  Rienäcker, Michael ^a,b   Merkle, Agnes ^a   Römer, Udo ^a   Kohlenberg, Heike ^a,b   Krügener, Jan ^b   Brendel, Rolf ^a,b   Peibst, Robby ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

back junction back contact solar cell; pn junction; POLO; polysilicon on oxide junctions; recombination; trench isolation

Indexed keywords

CRYSTALLINE MATERIALS; EFFICIENCY; ION IMPLANTATION; OPEN CIRCUIT VOLTAGE; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON; SOLAR CELLS;

BACK CONTACT; OXIDE JUNCTION; P-N JUNCTION; POLO; RECOMBINATION; TRENCH ISOLATION;

SILICON SOLAR CELLS;

EID: 85014435647     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2016.07.121     Document Type: Conference Paper

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