Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?

Solar Energy Materials and Solar Cells

Volumn 158, Issue , 2016, Pages 60-67

  Peibst, R ^a,b   Romer U ^a   Larionova, Y ^a   Rienacker M ^a   Merkle, A ^a   Folchert, N ^a   Reiter, S ^a   Turcu, M ^a   Min, B ^a   Krugener J ^b   Tetzlaff, D ^b   Bugiel, E ^b   Wietler, T ^b   Brendel, R ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Modelling; Passivating contact; Passivation; Polysilicon; Silicon solar cell

Indexed keywords

ELECTRIC RESISTANCE; HEAT TREATMENT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MODELS; PASSIVATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

DIRECT OBSERVATIONS; INTERFACIAL OXIDES; JUNCTION RESISTANCES; OXIDE LAYER THICKNESS; RECOMBINATION CURRENTS; SERIES RESISTANCES; STRUCTURAL MODIFICATIONS; TRANSPORT LIMITATIONS;

SILICON;

EID: 84971667640     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2016.05.045     Document Type: Article

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