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Volumn 158, Issue , 2016, Pages 2-10

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

Author keywords

Crystallization; Microcrystalline; Nanocrystalline; Nanostructure; Passivating contact; Phosphorous diffusion; Poly silicon; Raman; Silicon oxide; Surface passivation; Transmission line measurement

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; CURRENT DENSITY; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT ABSORPTION; MICROCRYSTALLINE SILICON; NANOCRYSTALLINE SILICON; NANOCRYSTALS; NANOSTRUCTURES; PASSIVATION; POLYCRYSTALLINE MATERIALS; REFRACTIVE INDEX; SILICON; SILICON OXIDES; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; THERMODYNAMIC STABILITY; TRANSPARENCY;

EID: 84992166514     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2016.06.040     Document Type: Article
Times cited : (94)

References (34)
  • 2
    • 84877272415 scopus 로고    scopus 로고
    • Physical model of back line-contact front-junction solar cells
    • [2] Cuevas, A., Physical model of back line-contact front-junction solar cells. J. Appl. Phys., 113(16), 2013.
    • (2013) J. Appl. Phys. , vol.113 , Issue.16
    • Cuevas, A.1
  • 4
    • 0005506619 scopus 로고
    • A 720 mV open circuit voltage SiOx:c-Si:SiOx double heterostructure solar cell
    • [4] Yablonovitch, E., Gmitter, T., Swanson, R.M., Kwark, Y.H., A 720 mV open circuit voltage SiOx:c-Si:SiOx double heterostructure solar cell. Appl. Phys. Lett., 47(11), 1985, 1211.
    • (1985) Appl. Phys. Lett. , vol.47 , Issue.11 , pp. 1211
    • Yablonovitch, E.1    Gmitter, T.2    Swanson, R.M.3    Kwark, Y.H.4
  • 5
    • 0025421579 scopus 로고
    • Polysilicon Emitters for Silicon Concentrator Solar Cells,
    • [5] J.Y. Gan, R.M. Swanson, Polysilicon Emitters for Silicon Concentrator Solar Cells, in: Proceedings of the 21st IEEE PVSC, 1990, pp. 245–250.
    • (1990) Proceedings of the 21st IEEE PVSC , pp. 245-250
    • Gan, J.Y.1    Swanson, R.M.2
  • 12
    • 0034664594 scopus 로고    scopus 로고
    • Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces
    • [12] Zacharias, M., Streitenberger, P., Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces. Phys. Rev. B 62:12 (2000), 8391–8396.
    • (2000) Phys. Rev. B , vol.62 , Issue.12 , pp. 8391-8396
    • Zacharias, M.1    Streitenberger, P.2
  • 13
    • 0001527010 scopus 로고
    • An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations
    • [13] Wolstenholme, G.R., Jorgensen, N., Ashburn, P., Booker, G.R., An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations. J. Appl. Phys. 61:1 (1987), 225–233.
    • (1987) J. Appl. Phys. , vol.61 , Issue.1 , pp. 225-233
    • Wolstenholme, G.R.1    Jorgensen, N.2    Ashburn, P.3    Booker, G.R.4
  • 16
    • 78649539042 scopus 로고    scopus 로고
    • Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells
    • [16] Cuony, P., Marending, M., Alexander, D.T.L., Boccard, M., Bugnon, G., Despeisse, M., Ballif, C., Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells. Appl. Phys. Lett., 97(no. 21), 2010, 213502.
    • (2010) Appl. Phys. Lett. , vol.97 , Issue.no. 21 , pp. 213502
    • Cuony, P.1    Marending, M.2    Alexander, D.T.L.3    Boccard, M.4    Bugnon, G.5    Despeisse, M.6    Ballif, C.7
  • 17
    • 0000089589 scopus 로고
    • Physical properties of semi-insulating polycrystalline silicon. I. Structure, electronic properties, and electrical conductivity
    • [17] Brüesch, P., Stockmeier, T., Stucki, F., Buffat, P.A., Physical properties of semi-insulating polycrystalline silicon. I. Structure, electronic properties, and electrical conductivity. J. Appl. Phys. 73:11 (1993), 7677–7689.
    • (1993) J. Appl. Phys. , vol.73 , Issue.11 , pp. 7677-7689
    • Brüesch, P.1    Stockmeier, T.2    Stucki, F.3    Buffat, P.A.4
  • 18
    • 0006724234 scopus 로고
    • Study on the optical absorption of oxygen-doped polysilicon thin films
    • [18] Pan, Y., Study on the optical absorption of oxygen-doped polysilicon thin films. Opt. Eng., 32(3), 1993, 589.
    • (1993) Opt. Eng. , vol.32 , Issue.3 , pp. 589
    • Pan, Y.1
  • 19
    • 0346961325 scopus 로고    scopus 로고
    • Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density
    • [19] Kobayashi Asuha, H., Maida, O., Takahashi, M., Iwasa, H., Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density. J. Appl. Phys., 94(11), 2003, 7328.
    • (2003) J. Appl. Phys. , vol.94 , Issue.11 , pp. 7328
    • Kobayashi Asuha, H.1    Maida, O.2    Takahashi, M.3    Iwasa, H.4
  • 23
    • 84941117096 scopus 로고    scopus 로고
    • Polarized raman signals from si wafers : dependence of in-plane incident orientation of probing light
    • [23] Yoo, W.S., Harima, H., Yoshimoto, M., Polarized raman signals from si wafers : dependence of in-plane incident orientation of probing light. ECS J. Solid State Sci. Technol. 4:9 (2015), 356–363.
    • (2015) ECS J. Solid State Sci. Technol. , vol.4 , Issue.9 , pp. 356-363
    • Yoo, W.S.1    Harima, H.2    Yoshimoto, M.3
  • 25
    • 0001813439 scopus 로고    scopus 로고
    • Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
    • [25] Solmi, S., Parisini, A., Angelucci, R., Armigliato, A., Nobili, D., Moro, L., Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates. Phys. Rev. B 53:12 (1996), 7836–7841.
    • (1996) Phys. Rev. B , vol.53 , Issue.12 , pp. 7836-7841
    • Solmi, S.1    Parisini, A.2    Angelucci, R.3    Armigliato, A.4    Nobili, D.5    Moro, L.6
  • 26
    • 0026899612 scopus 로고
    • A unified mobility model for device simulation-I. Model equations and concentration dependence
    • [26] Klaassen, D.B.M., A unified mobility model for device simulation-I. Model equations and concentration dependence. Solid State Electron. 35:7 (1992), 953–959.
    • (1992) Solid State Electron. , vol.35 , Issue.7 , pp. 953-959
    • Klaassen, D.B.M.1
  • 28
    • 0015328798 scopus 로고
    • Contact resistance and contact resistivity
    • [28] Berger, H.H., Contact resistance and contact resistivity. J. Electrochem. Soc., 119(4), 1972, 507.
    • (1972) J. Electrochem. Soc. , vol.119 , Issue.4 , pp. 507
    • Berger, H.H.1
  • 29
    • 0001675228 scopus 로고
    • Raman scattering from hydrogenated microcrystalline and amorphous silicon
    • [29] Iqbal, Z., Veprek, S., Raman scattering from hydrogenated microcrystalline and amorphous silicon. J. Phys. C. Solid State Phys., 377, 1982.
    • (1982) J. Phys. C. Solid State Phys. , vol.377
    • Iqbal, Z.1    Veprek, S.2
  • 30
    • 0030081591 scopus 로고    scopus 로고
    • Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
    • [30] DeWolf, I., Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits. Semicond. Sci. Technol. 11:2 (1996), 139–154.
    • (1996) Semicond. Sci. Technol. , vol.11 , Issue.2 , pp. 139-154
    • DeWolf, I.1
  • 34
    • 58149396410 scopus 로고    scopus 로고
    • Electron energy-loss spectroscopy in the TEM
    • [34] Egerton, R.F., Electron energy-loss spectroscopy in the TEM. Rep. Prog. Phys., 72(no. 1), 2008, 016502.
    • (2008) Rep. Prog. Phys. , vol.72 , Issue.no. 1 , pp. 016502
    • Egerton, R.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.