MoS2 transistors with 1-nanometer gate lengths

Science

Volumn 354, Issue 6308, 2016, Pages 99-102

  Desai, Sujay B ^a,b,c   Madhvapathy, Surabhi R ^a,b   Sachid, Angada B ^a,b   Llinas, Juan Pablo ^a,b   Wang, Qingxiao ^d   Ahn, Geun Ho ^a,b   Pitner, Gregory ^e   Kim, Moon J ^d   Bokor, Jeffrey ^a,b   Hu, Chenming ^a   Wong, H S Philip ^e   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d The University of Texas at Dallas   (United States)

^e Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INORGANIC COMPOUND; MOLYBDENUM DISULFIDE; SINGLE WALLED NANOTUBE; UNCLASSIFIED DRUG;

ELECTRODE; EQUIPMENT; FULLERENE; NANOTECHNOLOGY; SILICON; SIMULATION; SULFUR COMPOUND;

ARTICLE; DIELECTRIC CONSTANT; ELECTRIC FIELD; FIELD EFFECT TRANSISTOR; NANOTECHNOLOGY; PHYSICAL PARAMETERS; PRIORITY JOURNAL; SEMICONDUCTOR; STATIC ELECTRICITY; TRANSISTOR;

EID: 84990852890     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.aah4698     Document Type: Article

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