The effects of direct source-to-drain tunneling and variation in the body thickness on (100) and (110) sub-10-nm Si double-gate transistors

IEEE Electron Device Letters

Volumn 36, Issue 5, 2015, Pages 427-429

  Cho, Woo Suhl ^a   Roy, Kaushik ^a  

^a Purdue University   (United States)

Author keywords

crystalline orientation; source to drain tunneling; sub 10nm transistor; variation

Indexed keywords

CARRIER MOBILITY; QUANTUM CHEMISTRY; QUANTUM CONFINEMENT; SILICON;

CRYSTALLINE ORIENTATIONS; DOUBLE GATE TRANSISTOR; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM CONFINEMENT EFFECTS; SOURCE-TO-DRAIN TUNNELING; THICKNESS VARIATION; TRANSPORT CHARACTERISTICS; VARIATION;

MOSFET DEVICES;

EID: 84928711315     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2413785     Document Type: Article

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