Demolding in ultraviolet nanoimprinting assisted by a nanoscale lubricating fluid layer of condensed alternative chlorofluorocarbon

Bulletin of the Chemical Society of Japan

Volumn 89, Issue 7, 2016, Pages 786-793

  Nakagawa, Masaru ^a   Kaneko, Shu ^a   Ito, Shunya ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURING; FREE ENERGY; LUBRICATION; NANOTECHNOLOGY; RESINS; ROUGHNESS MEASUREMENT; SURFACE ROUGHNESS; SYNTHETIC LUBRICANTS;

1 ,6-HEXANEDIOL DIACRYLATE; LINE EDGE ROUGHNESS; LOW SURFACE ROUGHNESS; LUBRICATING FLUIDS; MORPHOLOGICAL CHARACTERISTIC; ULTRAVIOLET NANO-IMPRINTING; UV-CURABLE RESINS; UV-NANOIMPRINTING;

NANOIMPRINT LITHOGRAPHY;

EID: 84979574324     PISSN: 00092673     EISSN: 13480634     Source Type: Journal    
DOI: 10.1246/bcsj.20160107     Document Type: Article

References (29)

1. J. Haisma, M. Verheijen, K. van den Heuvel, J. van den Berg, J. Vac. Sci. Technol., B 1996, 14, 4124.
2. M. Malloy, C. L. Lloyd, J. Micro/Nanolithogr., MEMS, MOEMS 2011, 10, 032001.
3. J. G. Ok, S. H. Ahn, M. K. Kwak, L. J. Guo, J. Mater. Chem. C 2013, 1, 7681.
4. H. Lan, H. Liu, J. Nanosci. Nanotechnol. 2013, 13, 3145.
5. T. Higashiki, T. Nakasugi, I. Yoneda, J. Micro/Nanolithogr., MEMS, MOEMS 2011, 10, 043008.
6. Canon New Release on 23, Feb. 2015; http://www.canon.com/news/2015/feb23e3.html.
7. Toshiba Press Releases on 5, Feb. 2015; http://www.toshiba.co.jp/about/press/2015-02/pr0501.htm.
8. H. Hiroshima, Jpn. J. Appl. Phys. 2006, 45, 5602.
9. G.-Y. Jung, Z. Li, W. Wu, Y. Chen, D. L. Olynick, S.-Y. Wang, W. M. Tong, R. S. Williams, Langmuir 2005, 21, 1158.
10. A. Amirsadeghi, J. J. Lee, S. Park, Appl. Surf. Sci. 2011, 258, 1272.
11. J. Y. Kim, D.-G. Choi, J.-H. Jeong, E.-S. Lee, Appl. Surf. Sci. 2008, 254, 4793.
12. M. W. Lin, D. J. Hellebusch, K. Wu, E. K. Kim, K. H. Lu, K. M. Liechti, J. G. Ekerdt, P. S. Ho, C. G. Willson, J. Micro/Nanolithogr., MEMS, MOEMS 2008, 7, 033005.
13. H. Hiroshima, M. Komuro, N. Kasahara, Y. Kurashima, J. Taniguchi, Jpn. J. Appl. Phys. 2003, 42, 3849.
14. H. Hiroshima, M. Komuro, Jpn. J. Appl. Phys. 2007, 46, 6391.
15. S. Matsui, H. Hiroshima, Y. Hirai, M. Nakagawa, Microelectron. Eng. 2015, 133, 134.
16. H. Hiroshima, J. Vac. Sci. Technol., B 2009, 27, 2862.
17. H. Hiroshima, H. Atobe, Q. Wang, J. Photopolym. Sci. Technol. 2010, 23, 45.
18. H. Hiroshima, M. Komuro, J. Vac. Sci. Technol., B 2007, 25, 2333.
19. K. Kobayashi, S. Kubo, H. Hiroshima, S. Matsui, M. Nakagawa, Jpn. J. Appl. Phys. 2011, 50, 06GK02.
20. Q. Wang, H. Hiroshima, Jpn. J. Appl. Phys. 2010, 49, 06GL04.
21. H. Hiroshima, K. Suzuki, Jpn. J. Appl. Phys. 2011, 50, 06GK09.
22. S. Kaneko, K. Kobayashi, Y. Tsukidate, H. Hiroshima, S. Matsui, M. Nakagawa, Jpn. J. Appl. Phys. 2012, 51, 06FJ05.
23. G. Sauerbrey, Z. Phys. 1959, 155, 206.
24. A. Kohno, N. Sakai, S. Matsui, M. Nakagawa, Jpn. J. Appl. Phys. 2010, 49, 06GL12.
25. K. Kobayashi, S. Kubo, S. Matsui, M. Nakagawa, J. Vac. Sci. Technol. B 2010, 28, C6M50.
26. S. Ito, S. Kaneko, C. M. Yun, K. Kobayashi, M. Nakagawa, Langmuir 2014, 30, 7127.
27. D. K. Owens, R. C. Wendt, J. Appl. Polym. Sci. 1969, 13, 1741.
28. K. Wu, X. Wang, E. K. Kim, C. G. Willson, J. G. Ekerdt, Langmuir 2007, 23, 1166.
29. M. Bender, M. Otto, B. Hadam, B. Spangenberg, H. Kurz, Microelectron. Eng. 2002, 61-62, 407.