Band gap engineering of N-alloyed Ga2O3 thin films

AIP Advances

Volumn 6, Issue 6, 2016, Pages

  Song, Dongyu ^a   Li, Li ^a   Li, Bingsheng ^a   Sui, Yu ^a   Shen, Aidong ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b City College of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; FUSED SILICA; GALLIUM ALLOYS; GALLIUM COMPOUNDS; TERNARY ALLOYS; VANADIUM ALLOYS; X RAY DIFFRACTION;

AMORPHOUS SAMPLES; BAND GAP ENGINEERING; FUSED SILICA SUBSTRATES; HEXAGONAL STRUCTURES; NITRIDATION METHOD; NITRIDATION TEMPERATURE; OPTICAL BAND GAP ENERGY; TRANSMITTANCE MEASUREMENTS;

ENERGY GAP;

EID: 84975465566     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4954720     Document Type: Article

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