SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 13, 2015, Pages

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

(5) Inoue, Shin Ichiro a Naoki, Tamari a,b Kinoshita, Toru b Obata, Toshiyuki b Yanagi, Hiroyuki b

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

b TOKUYAMA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; CRYSTAL STRUCTURE; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM ALLOYS; NANOSTRUCTURES; NITRIDES; TIME DOMAIN ANALYSIS;

ALUMINUM NITRIDE (ALN); DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; FINITE-DIFFERENCE TIME-DOMAIN CALCULATIONS; NANOPHOTONIC STRUCTURES; NITRIDE BASED LIGHT EMITTING DIODES; PEAK EMISSION WAVELENGTH; SUBWAVELENGTH NANOSTRUCTURES; SURFACE CONFIGURATION;

LIGHT EMITTING DIODES;

EID: 84926431450 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4915255 Document Type: Article

Times cited : (143)

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