Wide range bandgap modulation based on ZnO-based alloys and fabrication of solar blind UV detectors with high rejection ratio

ACS Applied Materials and Interfaces

Volumn 6, Issue 16, 2014, Pages 14152-14158

  Su, Longxing ^a   Zhu, Yuan ^a   Yong, Dingyu ^b   Chen, Mingming ^a   Ji, Xu ^a   Su, Yuquan ^a   Gui, Xuchun ^a   Pan, Bicai ^b   Xiang, Rong ^a   Tang, Zikang ^a,c  

^a SUN YAT SEN UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

bandgap modulation; high rejection ratio; solar blind detector; stability

Indexed keywords

BERYLLIUM ALLOYS; BINARY ALLOYS; CONVERGENCE OF NUMERICAL METHODS; ENERGY GAP; FABRICATION; II-VI SEMICONDUCTORS; LATTICE CONSTANTS; MAGNESIUM ALLOYS; MAGNESIUM METALLOGRAPHY; MODULATION; OXIDE MINERALS; SEMICONDUCTOR ALLOYS; TERNARY ALLOYS; URANIUM METALLOGRAPHY; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZINC SULFIDE;

BANDGAP MODULATION; COMPOSITIONAL RANGE; FORMATION ENERGIES; METAL SEMICONDUCTOR METAL; REJECTION RATIOS; SOLAR BLIND ULTRAVIOLET; SOLAR-BLIND DETECTORS; THEORETICAL CALCULATIONS;

ZINC ALLOYS;

EID: 84906815106     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am503427u     Document Type: Article

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