Transformation from β-Ga2O3 to GaN nanowires via nitridation

Chinese Physics Letters

Volumn 25, Issue 3, 2008, Pages 1038-1041

  Wang, Peng Weio ^a   Song, Yi Pu ^a   Zhang, Xin Zheng ^a   Xu, Jun ^a   Yu, Da Peng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ENERGY GAP; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NITROGEN; PHASE TRANSITIONS; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC SULFIDE;

ACCEPTOR LEVELS; DIFFRACTION ANALYSIS; GAN NANOWIRES; HEAVY DOPING; LUMINESCENCE EMISSION; NITROGEN-DOPING; PHASES TRANSFORMATION; PROPERTY; RAMAN ANALYSIS; TRANSITION PROCESS;

NANOWIRES;

EID: 41149090785     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/3/063     Document Type: Article

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