Wurtzite-derived ternary I-III-O2 semiconductors

Science and Technology of Advanced Materials

Volumn 16, Issue 2, 2015, Pages

  Omata, Takahisa ^a   Nagatani, Hiraku ^a   Suzuki, Issei ^a   Kita, Masao ^b  

^a OSAKA UNIVERSITY   (Japan)

^b TOYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; II-VI SEMICONDUCTORS; LITHIUM ALLOYS; OXIDE SEMICONDUCTORS; SILVER ALLOYS; SOLAR ABSORBERS; THIN FILM SOLAR CELLS; WIDE BAND GAP SEMICONDUCTORS; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

DIRECT BAND GAP; GUIDING PRINCIPLES; LIGHT ABSORBERS; NEW APPLICATIONS; PRACTICAL USE; TERNARY OXIDES; TERNARY ZINCBLENDE; VISIBLE AND ULTRAVIOLET;

GALLIUM ALLOYS;

EID: 84928593282     PISSN: 14686996     EISSN: 18785514     Source Type: Journal    
DOI: 10.1088/1468-6996/16/2/024902     Document Type: Review

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