β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity

Journal of Alloys and Compounds

Volumn 660, Issue , 2016, Pages 136-140

  Guo, X C ^a   Hao, N H ^a   Guo, D Y ^a   Wu, Z P ^a   An, Y H ^a   Chu, X L ^a   Li, L H ^b   Li, P G ^a   Lei, M ^a   Tang, W H ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b STATE UNIVERSITY OF NEW YORK AT POTSDAM   (United States)

Author keywords

Ga2O3; Heterojunction; Solar blind; Ultraviolet photodetector

Indexed keywords

GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

EXTERNAL QUANTUM EFFICIENCY; LASER MOLECULAR BEAM EPITAXY; RECTIFYING CHARACTERISTICS; SOLAR BLIND; SOLAR BLIND ULTRAVIOLET; SOLAR-BLIND PHOTODETECTORS; ULTRA-VIOLET PHOTODETECTORS; WIDE-BAND-GAP SEMICONDUCTOR;

HETEROJUNCTIONS;

EID: 84949441201     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2015.11.145     Document Type: Article

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