Study of band-structure, optical properties and native defects in A IBIIIO2 (AI = Cu or Ag, B III = Al, Ga or In) delafossites

Semiconductor Science and Technology

Volumn 28, Issue 6, 2013, Pages

  Kumar, Mukesh ^a   Zhao, Hanyue ^a   Persson, Clas ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CO-EFFICIENT; DEFECT CALCULATIONS; DELAFOSSITE COMPOUNDS; DIELECTRIC FUNCTIONS; FIRST-PRINCIPLES APPROACHES; FUNDAMENTAL BAND GAP; OPTICAL CHARACTERISTICS; REAL AND IMAGINARY;

CALCULATIONS; DEFECTS; ENERGY GAP; GALLIUM; OPTICAL PROPERTIES; POSITIVE IONS;

SILVER;

EID: 84878329409     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/6/065003     Document Type: Article

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