Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes

ACS Applied Materials and Interfaces

Volumn 8, Issue 23, 2016, Pages 14596-14603

  Scheuermann, Andrew G ^a   Lawrence, John P ^a   Meng, Andrew C ^a   Tang, Kechao ^a   Hendricks, Olivia L ^b   Chidsey, Christopher E D ^b   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

atomic layer deposition; forming gas anneals; MIS; protection layers; Schottky junctions

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; HETEROJUNCTIONS; MANAGEMENT INFORMATION SYSTEMS; METAL INSULATOR BOUNDARIES; MIS DEVICES; TITANIUM DIOXIDE; TITANIUM OXIDES;

ATOMIC LAYER DEPOSITED; FORMING GAS; INTERFACE DEFECT PASSIVATIONS; INTERMEDIATE TEMPERATURES; METAL-INSULATOR-SEMICONDUCTORS; PROTECTION LAYERS; SCHOTTKY JUNCTIONS; THERMODYNAMIC POTENTIALS;

SEMICONDUCTOR JUNCTIONS;

EID: 84975139866     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.6b03688     Document Type: Article

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