The Influence of Structure and Processing on the Behavior of TiO2 Protective Layers for Stabilization of n-Si/TiO2/Ni Photoanodes for Water Oxidation

ACS Applied Materials and Interfaces

Volumn 7, Issue 28, 2015, Pages 15189-15199

  McDowell, Matthew T ^a,b   Lichterman, Michael F ^a,b   Carim, Azhar I ^a   Liu, Rui ^a,b   Hu, Shu ^a,b   Brunschwig, Bruce S ^b,c   Lewis, Nathan S ^a,b,c  

^a California Institute of Technology   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

heterojunction interfaces; oxygen evolution reaction; photocorrosion; photoelectrochemistry; solar fuels; water splitting

Indexed keywords

AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; CADMIUM TELLURIDE; CONDUCTIVE FILMS; CRYSTAL IMPURITIES; ELECTRODES; ELECTRONIC PROPERTIES; ENERGY GAP; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; GRAIN BOUNDARIES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; NICKEL COMPOUNDS; POTASSIUM HYDROXIDE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING TELLURIUM COMPOUNDS; SOLAR ABSORBERS; THIN FILMS; TITANIUM DIOXIDE;

HETEROJUNCTION INTERFACES; OXYGEN EVOLUTION REACTION; PHOTO-ELECTROCHEMISTRY; PHOTOCORROSION; SOLAR FUELS; WATER SPLITTING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84937695424     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b00379     Document Type: Article

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