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Volumn 158, Issue , 2016, Pages 77-83

Oxygen vacancies in tungsten oxide and their influence on tungsten oxide/silicon heterojunction solar cells

Author keywords

Amorphous crystalline silicon heterojunction solar cells; High work function metal oxide hole contacts; Tungsten oxide hole collector; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS SILICON; HETEROJUNCTIONS; METALS; OPEN CIRCUIT VOLTAGE; OXIDES; OXYGEN; PHOTOELECTRONS; PHOTONS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; STOICHIOMETRY; TIN OXIDES; TUNGSTEN; TUNGSTEN COMPOUNDS; ULTRATHIN FILMS; VACANCIES; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84975138408     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2016.05.042     Document Type: Article
Times cited : (150)

References (33)
  • 3
    • 67249132402 scopus 로고    scopus 로고
    • The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells
    • [3] Kanevce, A., Metzger, W.K., The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells. J. Appl. Phys., 105, 2009, 094507.
    • (2009) J. Appl. Phys. , vol.105 , pp. 094507
    • Kanevce, A.1    Metzger, W.K.2
  • 5
    • 84876357371 scopus 로고    scopus 로고
    • Impact of the transparent conductive oxide work function on injection-dependent a-Si:H/c-Si band bending and solar cell parameters
    • [5] Rößer, R., Leendertz, C., Korte, L., Mingirulli, N., Rech, B., Impact of the transparent conductive oxide work function on injection-dependent a-Si:H/c-Si band bending and solar cell parameters. J. Appl. Phys., 113, 2013, 144513, 10.1063/1.4799042.
    • (2013) J. Appl. Phys. , vol.113 , pp. 144513
    • Rößer, R.1    Leendertz, C.2    Korte, L.3    Mingirulli, N.4    Rech, B.5
  • 6
    • 84911943136 scopus 로고    scopus 로고
    • Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO
    • [6] Macco, B., Deligiannis, D., Smit, S., van Swaaij, R.A.C.M.M., Zeman, M., Kessels, W.M.M., Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO. Semicond. Sci. Technol., 29(12), 2014, 122001.
    • (2014) Semicond. Sci. Technol. , vol.29 , Issue.12 , pp. 122001
    • Macco, B.1    Deligiannis, D.2    Smit, S.3    van Swaaij, R.A.C.M.M.4    Zeman, M.5    Kessels, W.M.M.6
  • 8
    • 84940460381 scopus 로고    scopus 로고
    • Molybdenum and tungsten oxide: high work function wide band gap contact materials for hole selective contacts of silicon solar cells
    • [8] Bivour, M., Temmler, J., Steinkemper, H., Hermle, M., Molybdenum and tungsten oxide: high work function wide band gap contact materials for hole selective contacts of silicon solar cells. Sol. Energy Mater. Sol. Cells 142 (2015), 34–41, 10.1016/j.solmat.2015.05.031.
    • (2015) Sol. Energy Mater. Sol. Cells , vol.142 , pp. 34-41
    • Bivour, M.1    Temmler, J.2    Steinkemper, H.3    Hermle, M.4
  • 13
    • 84919658207 scopus 로고    scopus 로고
    • High efficiency hybrid PEDOT:PSS/nanostructured silicon Schottky junction solar cells by doping-free rear contact
    • [13] Zhang, Y., Cui, W., Zhu, Y., Zu, F., Liao, L., Lee, S.-T., Sun, B., High efficiency hybrid PEDOT:PSS/nanostructured silicon Schottky junction solar cells by doping-free rear contact. Energy Environ. Sci. 8 (2015), 297–302, 10.1039/C4EE02282C.
    • (2015) Energy Environ. Sci. , vol.8 , pp. 297-302
    • Zhang, Y.1    Cui, W.2    Zhu, Y.3    Zu, F.4    Liao, L.5    Lee, S.-T.6    Sun, B.7
  • 15
    • 84867496876 scopus 로고    scopus 로고
    • Transition metal oxides for organic electronics: energetics, device physicsand applications
    • [15] Meyer, J., Hamwi, S., Kröger, M., Kowalsky, W., Riedl, T., Kahn, A., Transition metal oxides for organic electronics: energetics, device physicsand applications. Adv. Mater. 24:40 (2012), 5408–5427, 10.1002/adma.201201630.
    • (2012) Adv. Mater. , vol.24 , Issue.40 , pp. 5408-5427
    • Meyer, J.1    Hamwi, S.2    Kröger, M.3    Kowalsky, W.4    Riedl, T.5    Kahn, A.6
  • 16
  • 19
    • 84875955891 scopus 로고    scopus 로고
    • Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy
    • [19] Mews, M., Schulze, T.F., Mingirulli, N., Korte, L., Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy. Appl. Phys. Lett., 102, 2013, 122106, 10.1063/1.4798292.
    • (2013) Appl. Phys. Lett. , vol.102 , pp. 122106
    • Mews, M.1    Schulze, T.F.2    Mingirulli, N.3    Korte, L.4
  • 20
    • 84935421988 scopus 로고    scopus 로고
    • Amorphous/crystalline silicon heterojunction solar cells with black silicon texture
    • [20] Mews, M., Leendertz, C., Algasinger, M., Koynov, S., Korte, L., Amorphous/crystalline silicon heterojunction solar cells with black silicon texture. Phys. Status Solidi RRL 8:10 (2014), 831–835, 10.1002/pssr.201409327.
    • (2014) Phys. Status Solidi RRL , vol.8 , Issue.10 , pp. 831-835
    • Mews, M.1    Leendertz, C.2    Algasinger, M.3    Koynov, S.4    Korte, L.5
  • 22
    • 84863112050 scopus 로고    scopus 로고
    • Effects of oxidation state and crystallinity of tungsten oxide interlayer on photovoltaic property in bulk hetero-junction solar cell
    • [22] Lee, J.-S., Jang, I.-H., Park, N.-G., Effects of oxidation state and crystallinity of tungsten oxide interlayer on photovoltaic property in bulk hetero-junction solar cell. J. Phys. Chem. C. 116 (2012), 13480–13487, 10.1021/jp2122505.
    • (2012) J. Phys. Chem. C. , vol.116 , pp. 13480-13487
    • Lee, J.-S.1    Jang, I.-H.2    Park, N.-G.3
  • 23
    • 67349119972 scopus 로고    scopus 로고
    • 3 interlayer: a study by photoelectron spectroscopy
    • 3 interlayer: a study by photoelectron spectroscopy. Org. Electron. 10 (2009), 637–642, 10.1016/j.orgel.2009.02.017.
    • (2009) Org. Electron. , vol.10 , pp. 637-642
    • Son, M.J.1    Kim, S.2    Kwon, S.3    Kim, J.W.4
  • 24
    • 0029344846 scopus 로고
    • Line broadening in semiconductor core level photoemission induced by barrier height inhomogeneity
    • [24] Cimino, R., Giarante, A., Horn, K., Pedio, M., Line broadening in semiconductor core level photoemission induced by barrier height inhomogeneity. Surf. Sci. 331 (1995), 534–539, 10.1016/0039–6028(95)00300–2.
    • (1995) Surf. Sci. , vol.331 , pp. 534-539
    • Cimino, R.1    Giarante, A.2    Horn, K.3    Pedio, M.4
  • 26
    • 49549153348 scopus 로고
    • Determination of surface properties by means of large signal photovoltage pulses and the influence of trapping
    • [26] Heilig, K., Determination of surface properties by means of large signal photovoltage pulses and the influence of trapping. Surf. Sci. 44 (1974), 421–437.
    • (1974) Surf. Sci. , vol.44 , pp. 421-437
    • Heilig, K.1
  • 27
    • 84930007154 scopus 로고    scopus 로고
    • Investigation of selective junctions using a newly developed tunnel current model for solar cell applications
    • [27] Varache, R., Leendertz, C., Gueunier-Farret, M., Haschke, J., Munoz, D., Korte, L., Investigation of selective junctions using a newly developed tunnel current model for solar cell applications. Sol. Energy Mater. Sol. Cells 141 (2015), 14–23, 10.1016/j.solmat.2015.05.014.
    • (2015) Sol. Energy Mater. Sol. Cells , vol.141 , pp. 14-23
    • Varache, R.1    Leendertz, C.2    Gueunier-Farret, M.3    Haschke, J.4    Munoz, D.5    Korte, L.6
  • 28
    • 84868568134 scopus 로고    scopus 로고
    • Transition metal oxide work functions: the influence of cation oxidation state and oxygen vacancies
    • [28] Greiner, M.T., Chai, L., Helander, M.G., Tang, W.-M., Lu, Z.-H., Transition metal oxide work functions: the influence of cation oxidation state and oxygen vacancies. Adv. Funct. Mater. 22:21 (2012), 4557–4568, 10.1002/adfm.201200615.
    • (2012) Adv. Funct. Mater. , vol.22 , Issue.21 , pp. 4557-4568
    • Greiner, M.T.1    Chai, L.2    Helander, M.G.3    Tang, W.-M.4    Lu, Z.-H.5
  • 29
    • 77951612123 scopus 로고    scopus 로고
    • Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated ingaas substrates
    • [29] Shin, B., Weber, J.R., Long, R.D., Hurley, P.K., Van de Walle, C.G., McIntyre, P.C., Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated ingaas substrates. Appl. Phys. Lett., 96(15), 2010, 152908.
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.15 , pp. 152908
    • Shin, B.1    Weber, J.R.2    Long, R.D.3    Hurley, P.K.4    Van de Walle, C.G.5    McIntyre, P.C.6
  • 30
    • 0042527466 scopus 로고
    • Reduction of tungsten oxides with hydrogen
    • [30] Hougen, J.O., Reeves, R.R., Mannella, G.G., Reduction of tungsten oxides with hydrogen. Ind. Eng. Chem. 48:2 (1956), 318–320, 10.1021/ie50554a042.
    • (1956) Ind. Eng. Chem. , vol.48 , Issue.2 , pp. 318-320
    • Hougen, J.O.1    Reeves, R.R.2    Mannella, G.G.3
  • 31
    • 84935506166 scopus 로고    scopus 로고
    • Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells
    • [31] Mews, M., Liebhaber, M., Rech, B., Korte, L., Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells. Appl. Phys. Lett., 107, 2015, 013902, 10.1063/1.4926402.
    • (2015) Appl. Phys. Lett. , vol.107 , pp. 013902
    • Mews, M.1    Liebhaber, M.2    Rech, B.3    Korte, L.4
  • 32
    • 0037212226 scopus 로고    scopus 로고
    • Characterization of tungsten oxide films of different crystallinity prepared by RF sputtering
    • [32] Akl, A., Kamal, H., Abdel-Hady, K., Characterization of tungsten oxide films of different crystallinity prepared by RF sputtering. Physica B: Condens. Matter 325 (2003), 65–75, 10.1016/S0921–4526(02)01431-X.
    • (2003) Physica B: Condens. Matter , vol.325 , pp. 65-75
    • Akl, A.1    Kamal, H.2    Abdel-Hady, K.3
  • 33
    • 84859088405 scopus 로고    scopus 로고
    • Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition
    • [33] Houweling, Z.S., Geus, J.W., de Jong, M., Harks, P.-P.R., van der Werf, K.H., Schropp, R.E., Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition. Mater. Chem. Phys. 131 (2011), 375–386, 10.1016/j.matchemphys.2011.09.059.
    • (2011) Mater. Chem. Phys. , vol.131 , pp. 375-386
    • Houweling, Z.S.1    Geus, J.W.2    de Jong, M.3    Harks, P.-P.R.4    van der Werf, K.H.5    Schropp, R.E.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.