Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells

Applied Physics A: Materials Science and Processing

Volumn 120, Issue 3, 2015, Pages 811-816

  Ziegler, Johannes ^a   Mews, Mathias ^c   Kaufmann, Kai ^d,e   Schneider, Thomas ^a   Sprafke, Alexander N ^a   Korte, Lars ^c   Wehrspohn, Ralf B ^a,b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

^d FRAUNHOFER CENTER FOR SILICON PHOTOVOLTAICS CSP   (Germany)

^e ANHALT UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; HETEROJUNCTIONS; SILICON; SILICON SOLAR CELLS;

ATOMIC LAYER DEPOSITED; HIGH GROWTH RATE; OVER-STOICHIOMETRIC; PLASMA PARAMETER; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SELECTIVE CONTACTS; SILICON HETEROJUNCTIONS;

MOLYBDENUM OXIDE;

EID: 84938994372     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-015-9280-3     Document Type: Article

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